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    Author Amoda, Oluwaseun Adeyemi (1)Chindanon, Kritsa (1)Hu, Lequn (1)Mallick, Shreeharsh (1)Vandersand Jr., James Dennis (1) Subject
    Electrical Engineering (5)
    Master of Science (5)
    Algorithms. (2)Epitaxy. (2)Adaptive control systems. (1)adaptive protection (1)air terminal (1)charge transfer system (1)Chemical Vapor Deposition (1)Depleted uranium--Arizona--Remote sensing. (1)... View MoreDate Issued2009 (2)2002 (1)2007 (1)2008 (1)Has File(s)true (5)

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    Development and evaluation of image registration and segmentation algorithms for long wavelength infrared and visible wavelength images 

    Hu, Lequn (Mississippi State University, 7/8/2009)
    In this thesis, algorithms for image registration and segmentation are developed to locate and identify DU penetrators and associated metal projectile debris on or near the surface at the US DoD firing ranges and proving ...
    
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    Laboratory study on lightning performance of dissipation devices 

    Mallick, Shreeharsh (Mississippi State University, 7/8/2009)
    The proponents of non-conventional lightning protection devices claim that these devices are superior to the conventional Franklin Rod. Lack of systematic study and insufficient field data make it difficult to compare the ...
    
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    Development of an adaptive protection scheme for shipboard power systems 

    Amoda, Oluwaseun Adeyemi (Mississippi State University, 2007-06-06)
    Reconfiguration is needed to meet the fight-through and survivability requirements of a shipboard power system. Reconfiguration involves the re-arrangement of power system topology through the opening and switching of ...
    
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    Growth of 6H-SiC homoepitaxy on substrates off-cut between the [01-10] planes 

    Vandersand Jr., James Dennis (Mississippi State University, 2002-11-07)
    The wide band-gap semiconductor silicon carbide has tremendous potential for use in high power, high temperature, and high frequency electronic devices. One of the more important design factors for these devices is the ...
    
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    Nitrogen doping in low temperature halo-carbon homoepitaxial growth of 4H-silicon carbide 

    Chindanon, Kritsa (Mississippi State University, 7/10/2008)
    With the low-temperature halo-carbon epitaxial growth technique developed at MSU prior to this work, use of a halo-carbon growth precursor enabled low-temperature homoepitaxial process for 4H-SiC at temperatures below 1300 ...
    Mississippi State University Libraries
    395 Hardy Rd
    P.O. Box 5408, Mississippi State, MS 39762-5408
    (662) 325-7668
    (662) 325-0011
    (662) 325-8183
    Contact repository admin Report a problem Terms of use Privacy policy Accessibility MSU Legal
     

     

    Mississippi State University Libraries
    395 Hardy Rd
    P.O. Box 5408, Mississippi State, MS 39762-5408
    (662) 325-7668
    (662) 325-0011
    (662) 325-8183
    Contact repository admin Report a problem Terms of use Privacy policy Accessibility MSU Legal