Browsing Theses and Dissertations by Subject "D-Center"
Now showing items 1-1 of 1
-
The Creation of Boron Deep Levels by High Temperature Annealing of 4H-SIC
Creation of semi-insulating layers in SiC is highly desirable for high voltage device fabrication. Specifically PiN diodes can be fabricated with a compensated semi-insulating layer that would be capable of blocking a large ...